Saturday, May 11, 2019
Clean room assignment engineering practice Lab Report
Clean room assignment engineering perpetrate - Lab Report ExampleThe next step in the fabrication process is to create the buried carry by implanting phosphorous ions in areas that will eventually be covered by polysilicon admittance electrodes. The n-type semiconductor formed by phosphorus contains negatively charged electrons as the old charge carriers and forms a pn-type diode structure, which serves to localize potential easys deep beneath the silicon/silicon dioxide interface. The potential well illustrated in the central portion of Figure 1 is a schematic drawing of the diode structure.The primary function of the buried channel is to localize integrated electrons away from the silicon/silicon dioxide interface, where they can ferment trapped during charge transfer. By localizing charge deep within the p-type silicon substrate, transfer of charge occurs to a greater extent efficiently with a minimum of residual charge remaining in the gate.After the buried channels are for med within the silicon substrate, a layer of silicon dioxide is thermally grown on the silicon wafer surface to provide an insulating base for the gate electrodes. Next, a phosphorous-doped layer of polycrystalline silicon (polysilicon) astir(predicate) 5,000 angstroms thick is grown on top of the oxide layer. This layer of polysilicon comprises the gate electrodes (see Figure 1) and is transparent to visible light, do it an ideal substance for use in CCDs. Although, the fabrication of a complete CCD takes additional steps, the basics of the MOS optical condenser assembly have been completed at this point.I Vs V Characteristics(According to M.Aceves, O.Malik, V. Grimalsky V.5 No. 2 (2004) P. 236-237), National set for Astrophysics, Optics and Electronics ( INAOE), Electronics Department.)The dynamic I-V characteristics of these MOS structures when linear voltage sweep (60 v/ sec) was applied to the metallic semitransparent gate is shown in the diagrams below. Dynamic I-V Charact eristics of fabricated MOS capacitor with silicon dioxide as insulator with positive (above) and negative (below) charge put down when a triangular sweep voltage ( 60 v/s) was applied to the gate. ReferencesProcess specialities IncDavidson Michael - National laid-back Magnetic Field Laboratory,1800 East Paul Dirac Dr, The Florida State University, Tallahassee, Florida, 32310Aceves, Malik, Grimalsky - National Institute for Astrophysics, Optics and Electronics ( INAOE), Electronics Department, P.O 51 AND 216, Puebla, Pue, Mexico. Physics and
Subscribe to:
Post Comments (Atom)
No comments:
Post a Comment